Dual-Schottky heteroepitaxial Nb:SrTiO <sub>3</sub> /TiN/Si for high-performance broadband photodetection across the UV–IR spectrum
This work achieves balanced UV–IR photodetection via heteroepitaxial dual-Schottky Nb:SrTiO 3 /TiN/Si. The TiN interlayer enables high-quality Nb:SrTiO 3 growth for UV absorption and induces LSPR to boost plasmonic IR absorption.
Authors
- Anran Niu (ORCID: https://orcid.org/0009-0006-3760-2728)
- Bin Yue
- Wenfeng Xiang (ORCID: https://orcid.org/0000-0002-2966-4746)
- Bingbing Li (ORCID: https://orcid.org/0000-0002-0282-1537)
- Minghao Hu (ORCID: https://orcid.org/0000-0002-2222-6823)
- Tao Cai (ORCID: https://orcid.org/0000-0002-3264-6178)
- Weiqiang Yang
Institutions
- China University of Petroleum, Beijing (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc02491a
- Citations
- 1
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.43