Structural Optimization of Schottky Diodes Based on Si

In the paper is shown results of studying the electrophysical properties of a Schottky diode created between a monocrystalline semiconductor and a polycrystalline metal structure, focusing on the impact of thermal annealing on the non-homogeneity of the contact (separating) interface.To investigate the role of non-homogeneity of the interface, the dependence of the Schottky diode's properties on thermal annealing parameters with different contact areas was examined.It was concluded that the effect of thermal annealing on the contact area allows for a deeper understanding of the processes occurring in the metal-semiconductor contact.The processes occurring at the metal-semiconductor contact can be explained within the framework of complex systems theory, taking into account the role of the metal's microstructure and the non-homogeneity of the contact surface in determining the electro-physical properties.