Low-voltage driven I–V hysteresis loop in Ag/SrTiO3/Si heterostructure

Hysteresis loop is a vital feature in the study of electronic devices, like ferroelectric hysteresis loop in ferroelectric devices, magnetic hysteresis loop in spin-electronic devices, and current–voltage (I–V) loop in memristors. Here, we report a type of I–V loop observed in the Ag/SrTiO3/Si structure, which can be dynamically varied by purely electrical modulation. This phenomenon can be attributed to the capacitive effect based on the resistance–capacitance circuit model. Additionally, we further explore the carrier transport mechanism by establishing different modulation methods of I–V hysteresis loops. This work expands our understanding of the behavior of electronic devices.