Energetic Particle and Ray Irradiation Effects in HfO<sub>2</sub> Optical Thin Film Materials
HfO 2 optical materials are extensively employed in the fabrication of high-power laser thin film components due to their high refractive index, elevated dielectric constant and thermal stability. However, their performance degradation under space radiation — primarily from energetic particles — remains poorly understood, with ground-based [Formula: see text]Co [Formula: see text]-ray experiments failing to replicate the complex ionization dynamics of space environments. In this study, we employ the Monte Carlo method to investigate the irradiation effects of [Formula: see text]Co [Formula: see text]-rays, electrons and protons on HfO 2 , material, establishing quantitative equivalence models that link secondary electron yields to particle type and energy. We demonstrate that 0.469 photons of 1.25[Formula: see text]MeV [Formula: see text]Co [Formula: see text]-rays induce ionization equivalent to 1[Formula: see text]MeV electrons and 0.483 [Formula: see text]-photons match the effect of 1[Formula: see text]MeV protons. The depth-dependent secondary electron distribution follows a Boltzmann function, enabling a theoretical framework to extrapolate [Formula: see text]Co [Formula: see text]-ray data for predicting space radiation effects. This work resolves the long-standing discrepancy between laboratory tests and in-space conditions, providing a foundation for radiation-hardened optical component design in aerospace applications.
Authors
- Zhilin Xia (ORCID: https://orcid.org/0000-0003-2457-1783)
- Xusheng Xia
- Yuheng Jiang
- Ruichen Song
- Zhufeng Shao (ORCID: https://orcid.org/0000-0001-6925-0022)
- Lanjian Nie
- Hui Wang (ORCID: https://orcid.org/0000-0002-5208-8329)
Institutions
- Wuhan University of Technology (CN)
- China Building Materials Academy (CN)
- Wuhan University of Science and Technology (CN)
Publication Details
- Journal
- NANO
- Published
- 2025-07-25
- DOI
- https://doi.org/10.1142/s1793292025501097
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00