Improvement of the performance of Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> solar cells by annealing Li-doped Cu<sub>2</sub>ZnSnS<sub>4</sub> precursor films in air

The PCE of the CZTSSe solar cell was enhanced from 9.06% to 10.21% by optimizing the Li doping content, and then further increased from 10.21% to 11.13% by adjusting the annealing temperature and time of CZTS doped with the optimal Li content in air.

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Publication Details

Journal
Journal of Materials Chemistry A
Published
2025-01-01
DOI
https://doi.org/10.1039/d5ta03482e
Citations
3
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
2.19
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Improvement of the performance of Cu2ZnSn(S,Se)4 solar cells by annealing Li-doped Cu2ZnSnS4 precursor films in air

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3 citations
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Chalcogenide Semiconductor Thin Films
2.19
article

Improvement of the performance of Cu2ZnSn(S,Se)4 solar cells by annealing Li-doped Cu2ZnSnS4 precursor films in air

Jiayong Zhang, Xiaofei Sun, Yuting Sun, Chunkai Wang, Yan Zhu, Zhanhui Ding, Xiaobo Du, Yongfeng Li, Bin Yao, Liyuan Shi, Ning Ding, Mengge Li, Yuhong Jiang
article en
3 citations

Abstract

The PCE of the CZTSSe solar cell was enhanced from 9.06% to 10.21% by optimizing the Li doping content, and then further increased from 10.21% to 11.13% by adjusting the annealing temperature and time of CZTS doped with the optimal Li content in air.

Journal of Materials Chemistry AVol. 13(35)
Jilin Normal University (CN), Northeast Normal University (CN), Jilin University (CN), State Key Laboratory of High Pressure and Superhard Materials (CN)
Openalex Percentile: Top 11%
Chalcogenide Semiconductor Thin Films
2.19
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Improvement of the performance of Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> solar cells by annealing Li-doped Cu<sub>2</sub>ZnSnS<sub>4</sub> precursor films in air — Jiayong Zhang, Xiaofei Sun, et al. · Journal of Materials Chemistry A (2025) | TGRS Research Map | TGRS