Solution-processed antimony-doped IGZTO thin-film transistors exhibiting superior operational stability under extreme environmental conditions
By introducing Sb into IGZTO TFTs, it exhibits improved electrical performance and various bias stability under extreme conditions.
Authors
- Pung Keun Song (ORCID: https://orcid.org/0000-0001-5683-2015)
- Min‐Kyu Son (ORCID: https://orcid.org/0000-0002-8815-9248)
- In Pyo Park
- Soo Won Heo (ORCID: https://orcid.org/0000-0003-2064-1895)
- Bu Kyeong Hwang
- Hyeon Jin Jung (ORCID: https://orcid.org/0000-0003-4944-9936)
- Hyun Sung Jung
- Bo Ram Lee (ORCID: https://orcid.org/0000-0002-4670-6717)
- Eun‐Jin Park (ORCID: https://orcid.org/0000-0001-6383-449X)
Institutions
- Korea Institute of Ceramic Engineering and Technology (KR)
- Pusan National University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01349f
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Trade, Industry and Energy
- National Research Foundation of Korea
- Korea Institute of Ceramic Engineering and Technology