Numerical simulation and characterization of solar cells based on GaAs/p-Si: influence on thickness and doping concentration dependence

Rapid urbanization and industrialization have had a substantial impact on the global growth in energy consumption over the last two decades. Solar energy is seen as an essential energy source capable of meeting this demand in a cost-effective and ecologically normal manner. Improving solar cell efficiency is seen as a requirement for sustaining the expansion of silicon solar cells in the energy industry. The influence parameters of both n-p regions thickness and doping concentrations on solar cell efficiency was investigated in this study using PC1D simulation software. The problem for solar panels is the efficiency and the output power of the solar panel. The objectives are to create thorough and realistic models for optimizing the thickness and doping concentration for solar cells using PC1D simulation. The most effective solar cell, which can be used to make a very efficient model, have an emitter thickness and base thickness of 0.1 µm (doping = ) and 100 µm (doping =) with an efficiency of 24.02% and 24.77%.