Fiber-to-chip grating coupler on 4H-silicon-carbide-on-insulator platform with high-efficiency

A fiber-to-chip grating coupler for transverse electric (TE) polarization was demonstrated on the emerging 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, with the advantages of high coupling efficiency, low back-reflection to the waveguide, and fabrication simplicity. These performances are enabled by the design combining an apodized diffractive grating with subwavelength gratings and the optimization using an intelligent algorithm. The grating coupler was fabricated via a single-mask process with lithography and etching techniques, and the experimental results demonstrate a peak coupling efficiency of -1.79 dB (66.2%) at 1549.7 nm with a 1-dB bandwidth of 31 nm and a back reflectance below -17 dB (2%) across 1541-1564 nm.

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Publication Details

Journal
Optics Express
Published
2025-08-04
DOI
https://doi.org/10.1364/oe.570674
Primary Topic
Photonic and Optical Devices
Type
article
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article

Fiber-to-chip grating coupler on 4H-silicon-carbide-on-insulator platform with high-efficiency

Rui Ma, Shuting Kang, Can Tao, Xin Ou et al.
Optics Express
Photonic and Optical Devices
article

Fiber-to-chip grating coupler on 4H-silicon-carbide-on-insulator platform with high-efficiency

Rui Ma, Shuting Kang, Can Tao, Xin Ou, Ailun Yi, Yu-Chen Zhang, Guoquan Zhang, Bo Fang, Bingcheng Yang
article en

Abstract

A fiber-to-chip grating coupler for transverse electric (TE) polarization was demonstrated on the emerging 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, with the advantages of high coupling efficiency, low back-reflection to the waveguide, and fabrication simplicity. These performances are enabled by the design combining an apodized diffractive grating with subwavelength gratings and the optimization using an intelligent algorithm. The grating coupler was fabricated via a single-mask process with lithography and etching techniques, and the experimental results demonstrate a peak coupling efficiency of -1.79 dB (66.2%) at 1549.7 nm with a 1-dB bandwidth of 31 nm and a back reflectance below -17 dB (2%) across 1541-1564 nm.

Optics ExpressVol. 33(17)
Shanghai Institute of Microsystem and Information Technology (CN), University of Chinese Academy of Sciences (CN)
Affordable and clean energy
Openalex Percentile: Top 83%
Photonic and Optical Devices
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