OPTIMIZATION OF A 16NM CMOS CIRCUIT USING SCHMITT TRIGGER INVERTER ALONG WITH TEMPERATURE AND FFT ANALYSIS FOR EV INDUSTRY AND HIGH FREQUENCY APPLICATIONS

With the high technological advancement in the field of communication and electronic circuits, the system needs to be more faster, precise and long lasting.Low power dissipation integrated nanometer circuits that can withstand large temperature variation are most preferred especially in EV (electric vehicle) industry.This paper proposes a 16nm CMOS(complementary metal oxide semiconductor) circuit attached to a Schmitt trigger inverter and can operate at variable temperature with very low power dissipation .This can widely be used in different systems ,e.g., Electric vehicle, mobile integrated circuits, sensors, communication systems, etc.The circuit is simulated in a temperature ranging from 0 C to 110 C along with a Schmitt trigger inverter attached to it which helps in removing noise from the signal and enhances the output.The propose design is simulated using 16nm CMOS technology that achieves a wideband range of up to 100 GHz and achieves a bandwidth of 90 GHz with a gain of 13.97 dB.It has a time delay of only 7.06fs and phase angle ranges from 0.2 to 2.8 .The total power dissipation of the circuit is only 7.35nW .The RMS noise in the circuit up to 100 GHz is only 0.0022914 fV.Fast Fourier Transformation (FFT) analysis also displays stable result in terms of signal strength.