Composition-controllable growth of GeTe<sub><i>x</i></sub> thin films <i>via</i> combined atomic layer deposition and chemical vapor deposition
This study advances selector device development by enabling low-temperature, composition-tunable GeTe x film deposition for 3D integration, suppressing substrate-dependent growth via passivation layers, and demonstrating robust OTS performance with >10 5 cycles and detailed material/device analysis.
Authors
- Min Gyoo Cho (ORCID: https://orcid.org/0009-0003-3742-0164)
- Seung Ho Jeon (ORCID: https://orcid.org/0000-0002-9045-6161)
- Byung Joon Choi (ORCID: https://orcid.org/0000-0003-1920-8162)
- Taeyong Eom (ORCID: https://orcid.org/0000-0002-9646-9553)
- Hyunwook Kim (ORCID: https://orcid.org/0000-0001-9725-6050)
- Ju Hwan Park
Institutions
- Seoul National University of Science and Technology (KR)
- Sejong University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc02138c
- Primary Topic
- Phase-change materials and chalcogenides
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Trade, Industry and Energy
- National Research Foundation of Korea
- Ministry of Science and ICT, South Korea