Integra-NANDSim: A New <i>VT</i> Distribution Simulator of 3-D NAND Flash Memories

In this paper, we propose a new virtual experiment environment for threshold voltage <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$(V_{T})$ </tex-math></inline-formula> distribution of 3-D Gate-All-Around (GAA) NAND flash memories with a spirit of Monte-Carlo (MC) simulation. Cell variation (CV) is modeled as a random normal distribution, and physical compact model is implemented to track threshold voltage of each cells. Influence of each widening factors and width transient of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{T}$ </tex-math></inline-formula> distribution are thoroughly investigated to focus on the difference from the conventional Monte-Carlo simulation. The resulting width transient suggests that the proposed simulation utilizing the compact model is more proactive and useful in predicting the distribution width, which is a critical factor for reliability control.