Short-Circuit Protection Circuit With Current Slope-to-Digital Conversion Short-Circuit Detection and Adaptive Soft Turn-Off

A short-circuit protection circuit is proposed for power electronic systems employing silicon carbide metal–oxide–semiconductor field-effect transistors. The circuit incorporates two innovative techniques: a current slope-to-digital conversion for short-circuit detection and an adaptive soft turn-off based on transistor input capacitance sensing. A low-side gate driver incorporating the proposed circuit was implemented on an integrated chip for functional verification. The gate driver reliably protects a wide range of silicon carbide metal–oxide–semiconductor field-effect transistor devices with current capacities from 10 to 95 A during short-circuit conditions. It ensures that the drain–source voltage overshoot remains below 14.5% of the drain–source voltage while achieving a consistent response delay of approximately 750 ns for short-circuit detection and a turn-off time of approximately 500 ns for soft turn-off operation.

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Publication Details

Journal
IEEE Open Journal of Power Electronics
Published
2025-01-01
DOI
https://doi.org/10.1109/ojpel.2025.3594872
Primary Topic
Non-Destructive Testing Techniques
Type
article
Field-Weighted Citation Impact
0.00

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article

Short-Circuit Protection Circuit With Current Slope-to-Digital Conversion Short-Circuit Detection and Adaptive Soft Turn-Off

Seungjik Lee, Jinman Myung, Ockgoo Lee, Ilku Nam et al.
1 links
IEEE Open Journal of Power Electronics
Non-Destructive Testing Techniques
article

Short-Circuit Protection Circuit With Current Slope-to-Digital Conversion Short-Circuit Detection and Adaptive Soft Turn-Off

Seungjik Lee, Jinman Myung, Ockgoo Lee, Ilku Nam, Y.C. Kim
article en

Abstract

A short-circuit protection circuit is proposed for power electronic systems employing silicon carbide metal–oxide–semiconductor field-effect transistors. The circuit incorporates two innovative techniques: a current slope-to-digital conversion for short-circuit detection and an adaptive soft turn-off based on transistor input capacitance sensing. A low-side gate driver incorporating the proposed circuit was implemented on an integrated chip for functional verification. The gate driver reliably protects a wide range of silicon carbide metal–oxide–semiconductor field-effect transistor devices with current capacities from 10 to 95 A during short-circuit conditions. It ensures that the drain–source voltage overshoot remains below 14.5% of the drain–source voltage while achieving a consistent response delay of approximately 750 ns for short-circuit detection and a turn-off time of approximately 500 ns for soft turn-off operation.

IEEE Open Journal of Power ElectronicsVol. 6
Pusan National University (KR)
Ministry of Trade, Industry and Energy, National Research Foundation of Korea, Ministry of Science and ICT, South Korea
Affordable and clean energy
Openalex Percentile: Top 81%
Non-Destructive Testing Techniques
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