Conformal ALD of tin-doped indium oxide transparent p-ohmic contacts for micro- and nano-LEDs
A bilayer PEALD ITO/ALD In 2 O 3 enables conformal, smooth, transparent, and damage-free p-ohmic contacts for high-efficiency GaN-based micro- and nano-LEDs.
Authors
- Sang‐Wan Ryu (ORCID: https://orcid.org/0000-0002-6093-1734)
- Hee Ryeong Kwon
- Ho Won Jang (ORCID: https://orcid.org/0000-0002-6952-7359)
- Mandar A. Kulkarni (ORCID: https://orcid.org/0000-0002-7217-8751)
- Taeseok Kim
- Jung‐El Ryu (ORCID: https://orcid.org/0000-0002-1795-827X)
- Seong Keun Kim (ORCID: https://orcid.org/0000-0001-8712-7167)
- Yongjo Park (ORCID: https://orcid.org/0000-0002-7165-8745)
- Sohyeon Park (ORCID: https://orcid.org/0000-0002-5171-0083)
- Sung Hyuk Park (ORCID: https://orcid.org/0000-0002-2473-4223)
- Sung Jin Seo
Institutions
- Chonnam National University (KR)
- Seoul National University (KR)
- Korea University (KR)
- Advanced Institute of Convergence Technology (KR)
- Korea Institute of Science and Technology (KR)
- Massachusetts Institute of Technology (US)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01462j
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Trade, Industry and Energy
- Ministry of Science and ICT, South Korea