A high-sensitivity epitaxial Ge/PbSe/CdSe/Bi<sub>2</sub>Se<sub>3</sub> p<sup>+</sup>pBn<sup>+</sup> barrier heterojunction for uncooled middle infrared detection
A new p + pBn + barrier infrared detector was designed via MBE technology, significantly reducing the room temperature dark current and enhancing the detectivity, which provides a promising solution for next-generation uncooled MWIR detectors.
Authors
- Dong Yang (ORCID: https://orcid.org/0000-0001-9730-6126)
- K. Chen
- Leisheng Su (ORCID: https://orcid.org/0000-0002-1966-9324)
- Weili Liu (ORCID: https://orcid.org/0000-0003-0725-3759)
- Chang Soo Yang (ORCID: https://orcid.org/0000-0002-1380-9533)
- Jijun Qiu (ORCID: https://orcid.org/0000-0003-0368-5327)
- Haofei Shi (ORCID: https://orcid.org/0000-0002-6083-2752)
- Yun Liu (ORCID: https://orcid.org/0000-0001-9630-7610)
- Yiming Yang (ORCID: https://orcid.org/0009-0008-5010-2749)
- Deping Huang
Institutions
- Dalian University of Technology (CN)
- Chongqing Institute of Green and Intelligent Technology (CN)
- East China Normal University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01859e
- Citations
- 2
- Primary Topic
- Thermography and Photoacoustic Techniques
- Type
- article
- Field-Weighted Citation Impact
- 1.73