Investigating Residual Stress and Cracking Limits in Thick Silicon Nitride for Scalable Photonic Integrated Circuits
Silicon nitride (SiN) enables low-loss, high-index-contrast photonic devices, but its thick-film integration is limited by stress-induced cracking. By combining atomistic simulations with experimental validation, we uncover how composition and process conditions govern mechanical stability-enabling the design of crack-resistant, high-yield SiN platforms for next-generation photonic devices.
Authors
- Brahim Ahammou (ORCID: https://orcid.org/0000-0002-2320-9689)
- Kulbir Kaur Ghuman (ORCID: https://orcid.org/0000-0002-3668-5043)
- Mohamed Amir Chaker (ORCID: https://orcid.org/0000-0001-9781-8842)
- Youssef Ouldhnini (ORCID: https://orcid.org/0000-0002-0768-2660)
- Leila Mehrvar
- Boris Le Drogoff (ORCID: https://orcid.org/0000-0001-6053-0335)
- Majid Taghavi (ORCID: https://orcid.org/0000-0003-1025-2490)
- Abir Radi
Institutions
- Institut National de la Recherche Scientifique (CA)
Publication Details
- Published
- 2025-05-20
- DOI
- https://doi.org/10.1109/pn66844.2025.11097183
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Canada Foundation for Innovation
- Natural Sciences and Engineering Research Council of Canada