Modeling Epsilon-Near-Zero Plasmonic Electro-Optic Modulators
We design and optimize an electro-optical modulator by combining plasmonic and epsilon-near-zero (ENZ) effects. Utilizing the ENZ effect in indium tin oxide (ITO) with voltage-controlled carrier modulation, modeled with Classical Drift-Diffusion (CDD) and nonlinear Schrödinger-Poisson Coupling (SPC) methods, the device is optimized for λ = 1550 nm, achieving 210 GHz bandwidth, 3 dB insertion loss, and 5 dB extinction ratio, in under 4 μm length.
Authors
- Hamid Mehrvar
- Pierre Berini (ORCID: https://orcid.org/0000-0002-6795-7275)
- Lora Ramunno (ORCID: https://orcid.org/0000-0003-1452-5484)
- Masoud Shabaninezhad (ORCID: https://orcid.org/0000-0003-1435-8989)
- Éric Bernier
Institutions
- University of Ottawa (CA)
- Huawei Technologies (Canada) (CA)
Publication Details
- Published
- 2025-05-20
- DOI
- https://doi.org/10.1109/pn66844.2025.11097082
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- CMC Microsystems