RRAM-Based In-Memory Stochastic Computing for Naïve Bayes Classifiers
A resistive random access memory (RRAM)-based in-memory stochastic computing (SC) scheme is proposed to address the limitation of representing small numbers in SC circuits, particularly for Naïve Bayes Classifiers (NBCs). The proposed scheme replaces multiplication with logarithmic summation, which is inherently realized through the logarithmic dependence of RRAM conductance and in-memory column-wise current accumulation. The scheme is evaluated using a fabricated RRAM array, demonstrating high classification accuracy, low hardware cost, and strong error tolerance. This work offers valuable insights for the design of SC circuits and supports the development of efficient edge computing systems.
Authors
- Yabo Qin
- Yimao Cai (ORCID: https://orcid.org/0000-0002-6854-8211)
- Zongwei Wang
- Lin Bao (ORCID: https://orcid.org/0000-0002-3146-6124)
- Haoran Wang (ORCID: https://orcid.org/0000-0002-3626-2286)
Institutions
- Fraunhofer Institute for Integrated Circuits (DE)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097263
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Structural Timber Innovation Company
- Natural Science Foundation of Beijing Municipality
- Higher Education Discipline Innovation Project
- Beijing Nova Program