THz Emission Engineering Using Resonant III-V Semiconductor Metamaterials

We designed a U-shaped III-V resonant antenna made of InSb semiconductor, enabling dynamic enhancement of the photon generation rate. By leveraging the magnetoplasmonic properties of InSb, we tailored the near-field interaction between the U-shaped antenna and a THz emitter, significantly enhancing the photon production rate detected in the far-field. Furthermore, this emission rate enhancement can be effectively tuned under weak magnetization, paving the way for bright quantum emitters in the THz regime.