Improved Uniformity and Endurance of Ag-Based Volatile Memristors via Annealing Engineering

This paper presents an annealing-based method to improve volatile memristor performance. After annealing at 400°C for 30s in an N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ambient, uniform threshold switching (TS) behavior was achieved, along with excellent endurance (>10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup>) and high selectivity (>10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup>). The results indicate that annealing improves endurance and uniformity by preventing excessive Ag accumulation and reducing scattering effects in HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>. This study demonstrates that annealing is an effective approach to enhancing volatile memristor performance.

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Published
2025-06-08
DOI
https://doi.org/10.23919/snw65111.2025.11097223
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.00

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article

Improved Uniformity and Endurance of Ag-Based Volatile Memristors via Annealing Engineering

Jinfeng Kang, Yulin Feng, Yading Yi, Shiyue Song et al.
Advanced Memory and Neural Computing
article

Improved Uniformity and Endurance of Ag-Based Volatile Memristors via Annealing Engineering

Jinfeng Kang, Yulin Feng, Yading Yi, Shiyue Song, Peng Huang, Dijiang Sun, Lifeng Liu, Xujin Song, Zhuohua Tang, Zheng Zhou, Shangze Li
article en

Abstract

This paper presents an annealing-based method to improve volatile memristor performance. After annealing at 400°C for 30s in an N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ambient, uniform threshold switching (TS) behavior was achieved, along with excellent endurance (>10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup>) and high selectivity (>10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup>). The results indicate that annealing improves endurance and uniformity by preventing excessive Ag accumulation and reducing scattering effects in HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>. This study demonstrates that annealing is an effective approach to enhancing volatile memristor performance.

Peking University (CN), Beijing Information Science & Technology University (CN)
National Natural Science Foundation of China, Higher Education Discipline Innovation Project
Affordable and clean energy
Openalex Percentile: Top 83%
Advanced Memory and Neural Computing
DOISourceOpenAlex
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Improved Uniformity and Endurance of Ag-Based Volatile Memristors via Annealing Engineering — Jinfeng Kang, Yulin Feng, et al. · (2025) | TGRS Research Map | TGRS