UV-Induced Persistent Photoconductivity in a-IGZO TFTs for Optoelectronic Synapses
Light sensitive amorphous Indium Gallium Zinc Oxide (a-IGZO) is utilized as the channel layer of a bottom gate (BG) thin film transistor (TFT) for achieving optoelectronic synaptic behavior for neuromorphic computing. The a-IGZO TFT shows persistent photoconductivity (PPC) states under optical excitation of ultra-violet (UV) 365nm wavelength, which enables the device to be used as synapses in artificial neural networks. It is observed that the PPC behavior is influenced by both gate voltage of the TFT and intensity of the optical excitation.
Authors
- Sharif Sadaf (ORCID: https://orcid.org/0000-0003-3129-6644)
- Md Zunaid Baten (ORCID: https://orcid.org/0000-0003-0656-2728)
- Arnob Ghosh (ORCID: https://orcid.org/0000-0002-0634-8660)
- Md. Afjalur Rahman (ORCID: https://orcid.org/0000-0002-0954-4288)
- Md. Moinul Islam (ORCID: https://orcid.org/0000-0002-7949-8571)
- Christy Giji Jenson
- Dipon Kumar Ghosh
- Nirmal Anand
Institutions
- Institut National de la Recherche Scientifique (CA)
Publication Details
- Published
- 2025-05-20
- DOI
- https://doi.org/10.1109/pn66844.2025.11097083
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00