Theoretical Insights into Next-Generation Hot Carrier Solar Cells

To surpass the Shockley-Queisser limit, hot carrier solar cells (HCSCs) require absorber materials with significantly inhibited carrier cooling. The debated mechanisms governing the promisingly slow cooling in metal halide perovskites (MHPs) and III-V multi-quantum wells (MQWs) are investigated using a comprehensive Ensemble Monte Carlo (EMC) simulation framework. We quantify the hot-phonon bottleneck (HPB) effect in MHPs, detailing its dependence on carrier density and key phonon properties, and demonstrate the detrimental impact of a cold carrier background on cooling rates. By successfully modeling experimental data for type-II InAs/AlAsSb MQWs, we validate our approach and confirm that nanostructuring enhances the phonon bottleneck. This work provides key physical insights and design principles for engineering advanced HCSC materials.

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Published
2025-05-20
DOI
https://doi.org/10.1109/pn66844.2025.11097145
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
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article

Theoretical Insights into Next-Generation Hot Carrier Solar Cells

Izak Baranowski, Stephen M. Goodnick, Mihail Nedjalkov, Dragica Vasileska et al.
3 links
Chalcogenide Semiconductor Thin Films
article

Theoretical Insights into Next-Generation Hot Carrier Solar Cells

Izak Baranowski, Stephen M. Goodnick, Mihail Nedjalkov, Dragica Vasileska, L. Jan Anton Koster, Lado Filipovic, Tim Faber
article en

Abstract

To surpass the Shockley-Queisser limit, hot carrier solar cells (HCSCs) require absorber materials with significantly inhibited carrier cooling. The debated mechanisms governing the promisingly slow cooling in metal halide perovskites (MHPs) and III-V multi-quantum wells (MQWs) are investigated using a comprehensive Ensemble Monte Carlo (EMC) simulation framework. We quantify the hot-phonon bottleneck (HPB) effect in MHPs, detailing its dependence on carrier density and key phonon properties, and demonstrate the detrimental impact of a cold carrier background on cooling rates. By successfully modeling experimental data for type-II InAs/AlAsSb MQWs, we validate our approach and confirm that nanostructuring enhances the phonon bottleneck. This work provides key physical insights and design principles for engineering advanced HCSC materials.

ON Semiconductor (United States) (US), TU Wien (AT), University of Groningen (NL), Arizona State University (US)
Austrian Science Fund
Affordable and clean energy
Openalex Percentile: Top 83%
Chalcogenide Semiconductor Thin Films
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Theoretical Insights into Next-Generation Hot Carrier Solar Cells — Izak Baranowski, Stephen M. Goodnick, et al. · (2025) | TGRS Research Map | TGRS