Deterministic Quantum Emission from p-GaN Defects and InGaN/GaN Dot-in-Nanowires

III-Nitride materials are considered promising for realizing deterministic quantum emitters based on localized defects and quantum dots. In this work, we compare the light emission characteristics of p-GaN point defects and site-controlled InGaN/GaN dot-in-nanowires to understand the viability of realizing deterministic single-photon emitters. Scanning fluorescence, micro-photoluminescence, hyperspectral mapping, interferometry and time correlated measurements have been performed to investigate these two types of emitters. Electromagnetic simulations have also been performed to design nanostructures for high brightness and tunable quantum emission.