Volatile and Nonvolatile Resistive Switching in Wafer-Scale MoS2 Memristors
We present a wafer-scale fabrication process of metal-organic chemical vapor deposited (MOCVD) MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-based memristors. Our memristors exhibit stable volatile and nonvolatile resistive switching (VS, NVS) and stable retention for at least 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup>s, highlighting the potential for large-scale neuromorphic applications.
Authors
- Lukas Völkel (ORCID: https://orcid.org/0000-0002-8138-9980)
- M. Heuken (ORCID: https://orcid.org/0000-0001-9739-9692)
- Andrei Vescan (ORCID: https://orcid.org/0000-0001-9465-2621)
- H. Kalisch (ORCID: https://orcid.org/0009-0000-4475-3766)
- Dennis Braun (ORCID: https://orcid.org/0000-0003-2803-1784)
- Holger Lerch (ORCID: https://orcid.org/0009-0003-8158-9012)
- Max C. Lemme (ORCID: https://orcid.org/0000-0003-4552-2411)
- Zhenxing Wang (ORCID: https://orcid.org/0000-0001-5083-0975)
- Yuan Fa
Institutions
- AMO (Germany) (DE)
- RWTH Aachen University (DE)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097209
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Bundesministerium für Bildung und Forschung