Capacitor-Less IGZO Based Gain Cell (2TOC): A Disruptive Technology for High-Density eDRAM and 3D-DRAM
Capacitorless IGZO-based gain cell (2T0C) is a disruptive concept that is currently expected to play a pivotal role in future eDRAM and 3D-DRAM implementation. After introducing this disruptive concept, we outline the most important knobs that enabled a rapid improvement of the bit cell performance, and the possible use for machine learning applications. We also outline the main challenges of this technology and the potential solutions that are currently investigated.
Authors
- Subhali Subhechha (ORCID: https://orcid.org/0000-0002-1960-5136)
- A. Belmonte
- Daisuke Matsubayashi (ORCID: https://orcid.org/0000-0002-2332-2569)
- Romain Delhougne
- A. Chasin (ORCID: https://orcid.org/0000-0003-4497-9866)
- Nouredine Rassoul (ORCID: https://orcid.org/0000-0001-9489-3396)
- Harold Dekkers
- Gouri Sankar Kar (ORCID: https://orcid.org/0000-0003-3122-4237)
- Yi Wan (ORCID: https://orcid.org/0009-0002-0756-1778)
- H. Oh
Institutions
- IMEC (BE)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097272
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00