Statistical Analysis of Subthreshold Current Distributions in Bulk MOSFETs at Room and Cryogenic Temperatures
Variability of bulk MOSFETs in the subthreshold region was measured at 300 K and 1.5 K. Subthreshold current variability is evaluated by dividing it into current onset voltage (COV), the voltage swing in the weak inversion region, and effective subthreshold voltage (VSS), the voltage swing in the deep-subthreshold region. Statistical analysis revealed that COV and Vss follow a Gumbel distribution at both 300K and 1.5K.
Authors
- Kiyoshi Takeuchi (ORCID: https://orcid.org/0000-0002-8392-1029)
- Takuya Saraya (ORCID: https://orcid.org/0000-0002-3796-7747)
- Hiroshi Oka (ORCID: https://orcid.org/0000-0002-6571-3461)
- T. Mizutani (ORCID: https://orcid.org/0000-0002-2358-3945)
- Toshiro Hiramoro
- Masaharu Kobayashi (ORCID: https://orcid.org/0000-0002-7945-6136)
- Takahiro Mori (ORCID: https://orcid.org/0000-0001-5899-1060)
Institutions
- National Institute of Advanced Industrial Science and Technology (JP)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097266
- Citations
- 1
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- New Energy and Industrial Technology Development Organization