BEOL-Compatible GAAFET Hybrid Memory Based on HfO<sub>2</sub>/ZrO<sub>2</sub>Superlattice with Morphotropic Phase Boundary
We propose a BEOL-compatible LTPS/SL-HZO GAAFET hybrid memory using SL-HZO with MPB properties as the charge-trapping layer. Fabricated via green laser crystallization and low-temperature microwave annealing, the device achieves low-voltage (±4 V), high-speed (100 ns) operation, 106-<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">cyc</inf>l<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</inf> endurance with only 12.5% memory window loss, and over 10-year retention. It also enables multi-bit and logic functions, showing strong potential for in-memory computing and 3D integration.
Authors
- Fu-Ju Hou (ORCID: https://orcid.org/0000-0001-8288-2542)
- Yi-Ju Yao (ORCID: https://orcid.org/0009-0000-7197-5495)
- Chen-You Wei (ORCID: https://orcid.org/0009-0005-5563-9690)
- Chih-Chao Yang
- C.-H. Chen (ORCID: https://orcid.org/0000-0002-8405-8837)
- Guang-Li Luo
- Yung-Chun Wu
- K.F. Liao
- Cheng-En Wu
Institutions
- National Tsing Hua University (TW)
- Taiwan Semiconductor Manufacturing Company (Taiwan) (TW)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097220
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00