Performance Evaluation of 3D 1T-nC Ferroelectric RAM Architectures

This paper reviews the performance of 3D 1T-nC FeRAM architectures, comparing two designs: type-I (FE capacitors on the gate) and type-II (FE capacitors on the drain). Type-I relies on an FeFET-like sensing scheme but struggles with degradation in coupling ratio as more capacitors are stacked, limiting its viability. In contrast, type-II is more compatible with conventional 1T1C DRAM sensing, though it requires FE capacitors to exceed 300 nm for adequate sensing margins. Additionally, this type faces challenges with write endurance due to disturbance effects, which can be mitigated through material engineering for field-dependent switching times or by incorporating ambipolar selectors to minimize voltage drop across unselected cells. These insights highlight the potential and constraints of advanced FeRAM architectures in next-generation memory applications.