Experimental Study on Double-Layer ZnO Resistive RAM (ReRAM) by Co-Optimized Sputtering and Low-Temperature ALD Processes
This work proposed a double-layer ZnO resistive random-access-memory (ReRAM) by magnetron sputtering (MS) and low temperature (70°C) atomic layer deposition (ALD). Compared to the single-layer ZnO ReRAM by MS or ALD, the proposed dual-layer ZnO ReRAM exhibits significantly enhanced resistive switching stabilities. The introduction of dopant gases in MS can increase the resistance of the high-resistance state (HRS) effectively, with higher ON/OFF ratio and lower cycle-to-cycle variations. These findings highlight the potential of ZnO film as a promising function layer for ReRAM in various applications.
Authors
- Pengpeng Sang (ORCID: https://orcid.org/0000-0001-8071-3024)
- Yifan Wu (ORCID: https://orcid.org/0000-0002-2856-9835)
- Jiezhi Chen (ORCID: https://orcid.org/0000-0003-2996-1406)
- Di Wu (ORCID: https://orcid.org/0000-0001-7801-5243)
- Junyao Mei
- Xuepeng Zhan (ORCID: https://orcid.org/0000-0002-1701-9301)
- Jixuan Wu (ORCID: https://orcid.org/0000-0002-3207-9724)
- Bo Chen (ORCID: https://orcid.org/0000-0001-6743-9251)
- Ruidong Li
- Peng Guo (ORCID: https://orcid.org/0000-0001-5585-292X)
Institutions
- Shandong University (CN)
- Sinochem Group (China) (CN)
- Cloud Computing Center (CN)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097244
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Shandong Province