The Impacts of Different Producing Methods on the Memristive Performance in Monolayer CBRAM
This study systematically investigates the effects of top electrodes via electron-beam evaporation and thermal deposition techniques on the performance of monolayer conductive-bridging random access memory (CBRAM). The top electrodes via electron-beam evaporation shows better device performances than those via thermal deposition including leakage, On/Off ratios and endurance in the monolayer CBRAM. This is verified by using Si substrate and titanium nitride (TiN) as a bottom electrode. Our finding indicates the fabrication methods have obvious effects on the memristive characteristics even in the same device structure, which may provide crucial experimental insights for electrode optimization in emerging non-volatile memory technologies.
Authors
- Yucheng Wu (ORCID: https://orcid.org/0000-0002-1549-0546)
- Pengpeng Sang (ORCID: https://orcid.org/0000-0001-8071-3024)
- Jixuan Wu (ORCID: https://orcid.org/0000-0002-5818-2623)
- Jiezhi Chen (ORCID: https://orcid.org/0000-0003-2996-1406)
- Xuepeng Zhan (ORCID: https://orcid.org/0000-0002-1701-9301)
- Bo Chen (ORCID: https://orcid.org/0000-0001-5151-9388)
- Ruidong Li (ORCID: https://orcid.org/0000-0002-4822-2898)
- Peng Guo
- Di Wu (ORCID: https://orcid.org/0000-0001-8888-2746)
- Hongyang Zhang (ORCID: https://orcid.org/0009-0007-2617-3638)
- Yixuan Fan (ORCID: https://orcid.org/0000-0002-9827-0177)
- Yuwei Qu (ORCID: https://orcid.org/0000-0003-1179-2800)
Institutions
- Shandong University (CN)
- Sinochem Group (China) (CN)
- Cloud Computing Center (CN)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097235
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China