Controlling Phosphorus Doping at the Nanoscale to Promote Synthetic Spin Orbit Coupling in Silicon
High phosphorus concentration was introduced in the near surface region of a highly resistive silicon substrate by ultra-low energy ion implantation (ULE-II), resulting in the formation of a two-dimensional electron gas (2DEG) with clear signature of weak antilocalization (WAL). In plane periodic modulation of dopant impurities notably affected the electron conduction and determined a significant increase of WAL signature.
Authors
- Francesc Pérez‐Murano (ORCID: https://orcid.org/0000-0002-4647-8558)
- Gabriele Seguini (ORCID: https://orcid.org/0000-0002-7729-6212)
- Michele Perego (ORCID: https://orcid.org/0000-0001-7431-1969)
- Michele Laus (ORCID: https://orcid.org/0000-0002-4296-3732)
- Riccardo Chiarcos (ORCID: https://orcid.org/0000-0002-7055-6114)
- G. Tallarida (ORCID: https://orcid.org/0000-0002-6794-0799)
- Andrea Pulici (ORCID: https://orcid.org/0009-0008-6392-8451)
- Stefano Kuschlan (ORCID: https://orcid.org/0000-0001-6096-7545)
- Jordi Llobet (ORCID: https://orcid.org/0000-0001-7007-9277)
- Marta Femandez-Regulez
Institutions
- Università degli Studi del Piemonte Orientale “Amedeo Avogadro” (IT)
- Semiconductor Manufacturing International (Italy) (IT)
- Institut de Microelectrònica de Barcelona (ES)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097218
- Primary Topic
- Magneto-Optical Properties and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00