Phosphorus Incorporation and Ionization in Ultra-Thin Silicon Films

Experimental results on ex-situ doping of ultra-thin silicon-on-insulator (SOI) substrates with device layer thickness <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathbf{H}_{\text{SOI}})$</tex> ranging from 8 to 30 nm are presented. This work provides fundamental information regarding doping at the nanoscale and demonstrates that proper surface passivation is crucial for controlling the electrical properties of ultra-thin Si films, resulting in a modulation of dopant ionization and carrier mobility in the conductive channel.