Quantitative Analysis of Endurance-Dependent Charge Trapping Dynamics in Ferroelectric Field-Effect Transistors with Temperature Effects

We present a quantitative reliability analysis of HZO/SiO2-based MFIS FeFETs under varying <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$T$</tex> and P/E cycles. Using PUND and transient response analysis, key parameters <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(2P_{\mathrm{r}},\ V_{\mathrm{C}},\ S_{\mathrm{V}}Q_{\text{Bo}},\ \tau_{\mathrm{B}})$</tex> were extracted to identify degradation mechanisms. Results highlight polarization loss and domain pinning, with charge trapping behavior.