High-Temperature Single-Electron Tunneling through P-donors Affected by Confinement

Dopant-atom-based single-electron transistors (SETs) have emerged as promising candidates for the next generation of silicon-based nano-electronic devices. However, the low tunnel barriers of conventional P-donors (≈45 meV) restrict their implementation for practical applications. The confinement effects, mainly quantum and dielectric, that are observable in nanoscale devices, can enhance the potential barrier and lead to elevated SET operation temperature. Here, we report experimentally the enhancement in ionization <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\boldsymbol{E}_{\mathbf{I}}\approx 195\ \mathbf{meV})$</tex> and charging <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\boldsymbol{E}_{\mathbf{C}} \approx 125\ \mathbf{meV})$</tex> energies of confinement-affected P-donors and observed high-temperature SET operation. Simulations confirm their extension to room-temperature operation.