Ion-Implantation Effects on Active Silicon Ring Resonator
We report post-fabrication trimming of silicon-on-insulator micro-ring resonators via introducing lattice defects by using ion-implantation. In this work, we demonstrate dose-dependent ion-implantation effects that enable wavelength shifts in opposing directions for annealed silicon ring resonators.
Authors
- Andrew P. Knights (ORCID: https://orcid.org/0000-0002-5201-6560)
- Feng Guo (ORCID: https://orcid.org/0000-0003-3584-154X)
Institutions
- McMaster University (CA)
Publication Details
- Published
- 2025-05-20
- DOI
- https://doi.org/10.1109/pn66844.2025.11097199
- Primary Topic
- Electrostatic Discharge in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00