Observation of State Change in 40nm TaOx ReRAM Cells During Read-Disturb
This work observes state change in 40 nm TaOx-based analog ReRAM during read-disturb. State change is detected by counting the frequency of random telegraph noise (RTN). Drift of the cell current is found at the initial 105 read cycles.
Authors
- Naoko Misawa
- Ken Takeuchi (ORCID: https://orcid.org/0000-0002-2391-1267)
- Chihiro Matsui (ORCID: https://orcid.org/0000-0002-2297-2869)
- S. Suzuki (ORCID: https://orcid.org/0000-0001-6906-4465)
Institutions
- Tokyo University of Information Sciences (JP)
- The University of Tokyo (JP)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097277
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00