High-Performance BEOL-Compatible ALD-IGZO Top-Gate Radio-Frequency Transistors

In this work, high-performance top-gate ALD-IGZO transistors have been demonstrated. The 140 nm channel length IGZO transistor exhibits a high on-state current exceeding 870 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{\mu}\mathbf{A}/\boldsymbol{\mu}\mathbf{m}$</tex> and a peak transconductance of 360 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{\mu}\mathbf{S}/\boldsymbol{\mu}\mathbf{m}$</tex> at a drain bias of 1 V. Moreover, a record-high extrinsic <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{f}_{\max}$</tex> of 13.8 GHz, together with a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{f}_{\mathrm{T}}$</tex> of 8.4 GHz have been achieved. These results highlight the great potential of IGZO transistors for BEOL-compatible RF applications.