O/H Supercritical Fluid Passivation on Stacked Ge_0.95Si_0.05 Nanosheet nFETs

O/H supercritical fluid (SCF) passivation enhances <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{I}_{\mathbf{ON}}$</tex> and reduces SS in stacked <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{Ge}_{0.95}\mathbf{Si}_{0.05}$</tex> nanosheet nFETs. With O-SCF, <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{I}_{\mathbf{ON}}$</tex> reaches <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$53\boldsymbol{\mu}\mathbf{A}$</tex> per floor at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{V}_{\mathbf{OV}}=\mathbf{V}_{\mathbf{DS}}=0.5\mathbf{V}$</tex>, while <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$250^{\circ}\mathbf{C}$</tex> H-SCF achieves a record <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{I}_{\text{ON}}$</tex> of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$73\boldsymbol{\mu}\mathbf{A}$</tex> per floor. O-SCF reduces oxygen vacancies in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{Hf}_{0.2}\mathbf{Zr}_{0.8}\mathbf{O}_{2}$</tex>, while H-SCF passivates <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{D}_{\text{it}}$</tex> at the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{Hf}_{0.2} \mathbf{Zr}_{0.8} \mathbf{O}_{2} / \mathbf{Ge}_{0.95} \mathbf{Si}_{0.05}$</tex> interface. H-SCF can outperform O-SCF, achieving improved <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{I}_{\text{ON}}$</tex> and SS due to higher diffusion coefficient and more effective passivation of H than O [1]. In addition, it does not form an interfacial layer, preserving large <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{C}_{\mathbf{OX}}$</tex>.