Total Ionizing Doses Effects on MOSFET, FinFET, and GAAFET After Co-60 Radiation Exposure

Co-60 radiation with different total doses was applied on MOSFET, FinFET, and GAAFET, respectively, in this work. Unlike reported simulation study, radiation-induced performance degradation of multi-gate devices is surprisingly less than expected. The proposed physical mechanisms are consistent with the reliability test results. This work shall provide important guidelines for designing radiation hardened MOS devices.