Numerical Investigation of Electrical Performance and Scaling Properties in 6T1C IGZO-Based Synaptic Devices
A 6T1C IGZO-based synaptic memory has excellent linearity, symmetry, and retention characteristics. In this work, we numerically investigate the performance of a 6T1C IGZO-based synaptic memory by examining leakage characteristics, synaptic behavior, and capacitance scaling. The impact of cell size reduction on retention characteristics is also evaluated.
Authors
- Changhoon Joe
- Y.K. Kwon (ORCID: https://orcid.org/0009-0007-8946-6825)
- Sang‐Bum Kim (ORCID: https://orcid.org/0000-0001-7460-3750)
- Sung‐Min Hong (ORCID: https://orcid.org/0000-0002-1840-085X)
- Youngchae Roh
Institutions
- Seoul National University (KR)
- Gwangju Institute of Science and Technology (KR)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097260
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00