3D Stacked Silicon Quantum Dots Using Potential Barriers by Shared Gates
We propose a 3D stacking scheme of silicon (Si) quantum dots (QDs) using potential barriers defined by shared fine gates, which allow for a more stable barrier formation in both top and bottom channels and avoid the difficulty of forming a stable inversion region in the bottom channel, where the electric field is relatively weaker than in the top channel. Measurements and 3D TCAD simulation results support our proposal. The design principles, process flow, and route to a scalable 3D Si QD array are presented.
Authors
- Junoh Kim (ORCID: https://orcid.org/0000-0002-0896-7561)
- Takuya Saraya (ORCID: https://orcid.org/0000-0002-3796-7747)
- Hiroshi Oka (ORCID: https://orcid.org/0000-0002-6571-3461)
- T. Mizutani (ORCID: https://orcid.org/0000-0002-2358-3945)
- Masaharu Kobayashi (ORCID: https://orcid.org/0000-0002-7945-6136)
- Takahiro Mori (ORCID: https://orcid.org/0000-0001-5899-1060)
- Toshiro Hiramoto (ORCID: https://orcid.org/0000-0001-9469-2631)
- Daiki Futagi
Institutions
- Italian Cultural Institute, Tokyo (JP)
- National Institute of Advanced Industrial Science and Technology (JP)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097243
- Citations
- 1
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.25