BEOL-Compatible Annealing Effects on Properties of ALD NbO<sub>X</sub> Films
This study investigates the effect of different BEOL-compatible thermal annealing on the characteristics of threshold switching (TS) of NbOx films. The composition of NbOx films annealed at various conditions was analyzed using XRD and TEM. Results demonstrated that the localized crystallization and oxygen stoichiometry significantly influenced the films' properties. Notably, thermally annealed films with moderately localized NbO crystallization and elevated oxygen stoichiometry exhibited enhanced TS rate and reduced leakage current <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{I}_{\text{off}})$</tex>.
Authors
- Rui Hua Xie (ORCID: https://orcid.org/0000-0002-0177-4417)
- Yimao Cai (ORCID: https://orcid.org/0000-0002-6854-8211)
- Gaoqi Yang
- Lin Bao (ORCID: https://orcid.org/0000-0002-3146-6124)
- Zongwei Wang (ORCID: https://orcid.org/0000-0001-6297-2700)
- Linbo Shan
- Jiye Li (ORCID: https://orcid.org/0000-0001-6648-0615)
Institutions
- Peking University (CN)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097258
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00