Understanding the Photophysical Properties of Near-Infrared Defect Quantum Emitters in $p$-Type GaN

Single defect emitters in gallium nitride (GaN) films have emerged as ideal candidates for quantum photonic integrated circuits (QPICs), offering stable room-temperature single-photon emission—a crucial feature for practical quantum technologies. In this work, we present a detailed photophysical analysis of single point-defects in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$p$</tex>-type GaN films grown under two different growth techniques, emitting in the near-infrared (NIR) spectral range. Through micro-photoluminescence spectroscopy, time-resolved photoluminescence and photon statistics, we examine how their luminescence stability (i.e. photobleaching, blinking etc.) correlates with the growth technique and conditions. Our results provide new insights for the controlled fabrication of GaN based single-photon emitters for applications in quantum photonics.