A Ballistic Transport Model for Nanosheet CFETs with Si(100), (110), and (111) Channel Orientations
Based on the Landauer approach and 3D channel geometry scaling, we present a ballisti<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sup> model for gate-all-around (GAA) nanosheet CFETs with various channel orientations, specifically [100 110] and [111]. The model is calibrated using TCAD and can be generalized to other 3D FET architectures. Good agreements can be obtained between the simulation and experiments.
Authors
- H.S. Tsai (ORCID: https://orcid.org/0000-0003-3911-3101)
- Yung‐Chin Yang (ORCID: https://orcid.org/0000-0002-0545-789X)
- Te-Kung Chiang
- Yeong-Her Wang
Institutions
- National University of Kaohsiung (TW)
- Institute of Microelectronics (SG)
- National Kaohsiung University of Applied Sciences (TW)
- National Cheng Kung University (TW)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097256
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00