Enhanced Electrical Characteristics of Ge MOS Device by In-Situ Low Temperature H<sub>2</sub> Treatment
A lower EOT of 0.63 nm and less frequency dispersion are achieved by an in-situ low temperature hydrogen treatment on GeO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> IL during the gate stack deposition in ALD. Thanks to the oxygen vacancy reduction and removal of GeO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>, electrical characteristics are improved for Ge MOS devices, Ge nMOSFET and Ge FinFET.
Authors
- Dun‐Bao Ruan (ORCID: https://orcid.org/0000-0001-6939-5723)
- Pei‐Chieh Hsiao (ORCID: https://orcid.org/0000-0001-6949-7308)
- Hsin-I Yeh
- Yu-Hsuan Chien (ORCID: https://orcid.org/0009-0009-4404-8472)
- Bo-Lien Kuo
- Cheng-Han Li (ORCID: https://orcid.org/0000-0002-1095-1593)
- Kai‐Chun Yang (ORCID: https://orcid.org/0000-0001-8198-2509)
- Kuei‐Shu Chang‐Liao (ORCID: https://orcid.org/0000-0003-1362-7892)
- Chih‐Wei Liu (ORCID: https://orcid.org/0000-0001-7226-0555)
- Cheng‐Yu Wu
Institutions
- National Tsing Hua University (TW)
- Institute of Microelectronics (CN)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097267
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00