A Diode-Resistor Model to Understand Leakage Current in High Power Buried Heterostructure Semiconductor Diode Lasers
Here, we propose a diode-resistor model to understand leakage current in buried heterostructure semiconductor diode lasers. We fabricated semiconductor diode lasers having two different mesa surface dopings above the active region and measured their LIVs. A curve fit was then performed on this experimental LIV data and model parameters were extracted from the curve fit. The extracted model parameters show a clear trend that can help explain the impact of different mesa surface dopings on leakage current in such lasers.
Authors
- M. Rahim (ORCID: https://orcid.org/0000-0002-9812-9157)
- Bernard Paquette
- Muhammad Mohsin (ORCID: https://orcid.org/0000-0001-7101-6323)
- J. Lapointe (ORCID: https://orcid.org/0009-0009-3837-5282)
- D. Bédard (ORCID: https://orcid.org/0000-0002-5155-5669)
- Ping Zhao (ORCID: https://orcid.org/0000-0003-0242-1338)
- Zhen Xu (ORCID: https://orcid.org/0000-0001-7011-3236)
- D. Goodchild
- C.T. Elliott
- P. Waldron (ORCID: https://orcid.org/0009-0000-1838-5971)
- G. Pakulski
- Ciaran D'Arcy McDonald-Jensen
Institutions
- National Research Council Canada (CA)
- Carleton University (CA)
Publication Details
- Published
- 2025-05-20
- DOI
- https://doi.org/10.1109/pn66844.2025.11097182
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00