Scalable InGaN/GaN Nanowires Self-Powered Photoelectrochemical Photodetector
Photoelectrochemical photodetectors (PDs) have attracted a considerable attention due to their self-powered operation, excellent sensitivity, and ability to respond to environmental changes. Here, we have fabricated a self-powered PEC-PD InGaN/GaN multiquantum well (MQW) nanowires (NWs) device using a scalable silica nanosphere lithography technique. The device shows maximum photoresponse at wavelength of 365 nm with responsivity and detectivity around 0.39 A/W and 5.5 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> Jones under the irradiation light intensity of 0.7 mW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>.
Authors
- Sharif Sadaf (ORCID: https://orcid.org/0000-0003-3129-6644)
- Md Zunaid Baten (ORCID: https://orcid.org/0000-0003-0656-2728)
- Kishan Kumawat (ORCID: https://orcid.org/0000-0003-2076-8431)
- Md. Afjalur Rahman (ORCID: https://orcid.org/0000-0002-0954-4288)
- Md. Moinul Islam (ORCID: https://orcid.org/0000-0002-7949-8571)
- Christy Giji Jenson
- Dipon Kumar Ghosh
- Nirmal Anand
Institutions
- Institut National de la Recherche Scientifique (CA)
Publication Details
- Published
- 2025-05-20
- DOI
- https://doi.org/10.1109/pn66844.2025.11097194
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00