Multiple-Electron Random Network System Simulation Based on Carbon Nanotube/Polyoxometalate Network

The implementation of neuromorphic devices based on nanomaterials, such as carbon nanotubes (CNTs) and polyoxometalates (POMs), is promising. We extended the simulation approach for single-electron circuits to that for multiple-electron systems and attempted to simulate CNT/POM random networks using this multiple-electron system model. Through the simulation, we observed the emergence of current pulses and identified hysteresis behavior across the entire random network. Furthermore, we found that the hysteresis behavior varies with the number of tunnel junctions in the random network.