Spatial Noise Correlation in Silicon Qubit Devices

Understanding of the nature of noise is at the heart of qubit device development. We discuss our recent studies to quantify and understand the spatial correlations of noise in silicon spin qubit devices, one of the leading candidate systems for large-scale quantum computation. We demonstrate that correlated noise is dominated by charge noise and can be characterized based on simultaneous measurements of spin precession rates or charge stability of individual dots. These characterization tools may prove useful in unveiling noise mechanisms in the qubit device.