On the External Quantum Efficiency of Green InGaN nanoLEDs for AR/VR Applications
Optoelectronic effects of dielectric sidewall passivation on green-emitting InGaN nanoscale light-emitting diodes were investigated. A thermally grown aluminum oxide (Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>) passivation layer, deposited via atomic layer deposition (ALD), exhibited significant improvements in both optical and electrical properties compared to conventional plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide (SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>). Devices with ALD passivation demonstrated more uniform light emission and the lowest leakage currents across all fabricated devices. The critical role of sidewall passivation are further highlighted through comparative analyses of leakage currents and external quantum efficiency (EQE).
Authors
- Sharif Sadaf (ORCID: https://orcid.org/0000-0003-3129-6644)
- Md. Afjalur Rahman (ORCID: https://orcid.org/0000-0002-0954-4288)
- Christy Giji Jenson
- Dipon Kumar Ghosh
- Nirmal Anand
Institutions
- Institut National de la Recherche Scientifique (CA)
Publication Details
- Published
- 2025-05-20
- DOI
- https://doi.org/10.1109/pn66844.2025.11097110
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00