Displacement Damage Effects Induced by Proton Irradiation in $\boldsymbol{\beta}-\mathbf{Ga}_{2}\mathbf{O}_{3}$ Schottky Barrier Diodes
In this study, vertical <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{\beta}-\mathbf{Ga}_{2}\mathbf{O}_{3}$</tex> SBDs were fabricated and tested for radiation hardness under proton irradiation. Displacement damage led to degradation in current and capacitance, while the breakdown voltage increased due to higher resistance.
Authors
- Jae Hwa Seo
- Young Jun Yoon (ORCID: https://orcid.org/0000-0001-8755-5057)
- Young Jo Kim (ORCID: https://orcid.org/0000-0001-8802-8996)
- Sung Yun Woo (ORCID: https://orcid.org/0000-0002-0857-3183)
- Tae‐Kyu Kwon (ORCID: https://orcid.org/0000-0002-2755-2062)
Institutions
- Korea Electrotechnology Research Institute (KR)
- Uiduk University (KR)
- Kyungpook National University (KR)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.23919/snw65111.2025.11097240
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Korea Electrotechnology Research Institute
- National Research Council of Science and Technology